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ZXTP19060CZ 60V PNP medium transistor in SOT89
Summary
BVCEO > -60V BVECO > -7V IC(cont) = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m PD = 2.4W Complementary part number ZXTN19060CZ
Description
Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
C
B
Features
* * * * High gain Low saturation voltage High peak current 7V reverse blocking voltage
E
Applications
* * * High side driver Motor drive Load disconnect switch
E C C B
Tape width (mm) 12 Quantity per reel 1000
Ordering information
Device ZXTP19060CZTA Reel size (inches) 7
Pinout - top view
Device marking
1M2
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ZXTP19060CZ
Absolute maximum ratings
Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Collector voltage (reverse blocking) Emitter-Base voltage Continuous Collector current(c) Base current Peak pulse current Power dissipation at TA =25C(a) Linear derating factor Power dissipation at TA =25C(b) Linear derating factor Power dissipation at TA =25C(c) Linear derating factor Power dissipation at TA =25C(d) Linear derating factor Power dissipation at TC =25C(e) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD PD Symbol VCBO VCEO VECX VEBO IC IB ICM PD Limit -60 -60 -7 -7 -4.5 -1 -7 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 26.7 213 -55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Junction to case(e) Symbol R R R R R
JA JA JA JA JC
Limit 117 68 51 28 4.69
Unit C/W C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<10 seconds. (e) Junction to case (collector tab). Typical
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ZXTP19060CZ
Thermal characteristics
Collector Current (A)
10
CE(sat)
Max Power Dissipation (W)
V
2.4
Limited
see note (c)
2.0
see note (b)
1
DC 1s 100ms 10ms 1ms 100s
1.6
1.2
see note (a)
100m
Single Pulse T
amb
0.8
=25C
0.4
-I
C
see note (c)
10m 100m 1
CE
0.0 0 20 40 60 80 100 120 140 160
10
-V
Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
Derating Curve
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ZXTP19060CZ
Thermal characteristics
Thermal Resistance (C/W)
120
amb
100
Maximum Power (W)
T =25C Single Pulse T
amb
100 80 60 40 20 0 100
see note (a)
=25C
see note (a)
D=0.5
10
D=0.2
Single Pulse D=0.05 D=0.1
1m
10m 100m
1
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
Thermal Resistance (C/W)
70 60 50 40 30 20 10 0 100
D=0.1 D=0.2 Single Pulse D=0.05 D=0.5
amb
100
Maximum Power (W)
T =25C Single Pulse T
amb
see note (b)
=25C
see note (b)
10
1m
10m 100m
1
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s) Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
Thermal Resistance (C/W)
Maximum Power (W)
50 40 30 20 10 0 100
100
T
amb
=25C
Single Pulse T
amb
see note (c)
=25C
see note (c)
D=0.5
10
D=0.2
Single Pulse
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXTP19060CZ
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Emitter cut-off current Collector-Emitter saturation voltage Symbol BVCBO BVCEO BVECX BVECO BVEBO ICBO IEBO VCE(sat) Min. -60 -60 -7 -7 -7 Typ. -110 -90 -8.4 -8.8 -8.4 <1 <1 -62 -150 -500 -105 -145 -240 -965 -875 200 160 25 330 260 45 180 280 29.5 24.3 13.2 456 68.2 400 40 -50 -0.5 -50 -80 -205 -750 -165 -200 -410 -1050 -1000 500 Max. Unit V V V V V nA A nA mV mV mV mV mV mV mV mV Conditions IC = -100A IC= -10mA (*) IE = -100A, RBC < 1k or 0.25V > VBC > -0.25V IE = -100A IE = -100A VCB = -60V VCB = -60V, Tamb=100C VEB = -5.6V IC = -1A, IB = -100mA(*) IC = -1A, IB = -20mA(*) IC = -2A, IB = -40mA(*) IC = -2A, IB = -200mA(*) IC = -3A, IB = -300mA(*) IC = -4.5A, IB = -450mA(*) IC = -4.5A, IB = -450mA(*) IC = -4.5A, VCE = -2V(*) IC = -100mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -4.5A, VCE = -2V(*) MHz pF pF ns ns ns ns IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA IC = -50mA, VCE = -10V f = 50MHz VEB = -0.5V, f = 1MHz(*) VCB = -10V, f = 1MHz(*)
Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio
VBE(sat) VBE(on) hFE
Transition frequency Input capacitance Output capacitance Delay time Rise time Storage time Fall time
fT Cibo Cobo td tr ts tf
NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
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Typical characteristics
1
Tamb=25C I /I =100
C B
0.3
I /I =10
C B
(V)
CE(SAT)
CE(SAT)
100m
I /I =50
C B
(V)
0.2
150C
-V
I /I =20
C B
-V
0.1
100C
25C
10m 1m 10m 100m
I /I =10
C B
-55C
0.0 1 10 10m 100m 1 10
-I
C
Collector Current (A)
CE(SAT)
-I
C
Collector Current (A)
CE(SAT)
V
vI
C
V
vI
C
1.2 1.6
V 150C
CE
=2V
600
I /I =10
C B
Normalised Gain
Typical Gain (hFE )
1.4 1.2 1.0 0.8 0.6 0.4
-55C 25C 100C
500
1.0
-55C
25C
400
(V)
BE(SAT)
0.8
300
0.6
150C
-V
200
0.2 0.0 1m 10m 100m 1
100
0.4
100C
0
0.2 1m 10m 100m 1 10
10
-I
C
Collector Current (A)
-I
C
Collector Current (A)
h
FE
vI
C
V
BE(SAT)
vI
C
400 1.0
V =2V 25C
CE
350
Cibo
f = 1MHz
Capacitance (pF)
-55C
300 250 200 150 100 50 0
Cobo
BE(ON)
(V) -V
0.8
0.6
0.4
100C
150C
0.2 1m 10m 100m 1 10
10m
100m
1
10
-I
C
Collector Current (A)
BE(ON)
- Voltage(V)
V
vI
C
Capacitance v Voltage
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ZXTP19060CZ
Package outline - SOT89
D D1 C A
H
E
E1
L B B1 e e1
DIM A B B1 C D D1
Millimeters Min 1.40 0.44 0.36 0.35 4.40 1.52 Max 1.60 0.56 0.48 0.44 4.60 1.83
Inches Min 0.550 0.017 0.014 0.014 0.173 0.064 Max 0.630 0.022 0.019 0.017 0.181 0.072
DIM E E1 e e1 H L
Millimeters Min 2.29 2.13 Max 2.60 2.29
Inches Min 0.090 0.084 Max 0.102 0.090
1.50 BSC 3.00 BSC 3.94 0.89 4.25 1.20
0.059 BSC 0.118 BSC 0.155 0.035 0.167 0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP19060CZ
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
(c) 2008 Published by Zetex Semiconductors plc
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